• DocumentCode
    2579057
  • Title

    3D proximity effect correction for multi-layer structures in EB lithography

  • Author

    Ogino, K. ; Hoshino, H. ; Machida, Y. ; Osawa, M. ; Arimoto, H. ; Maruyama, T. ; Kawamura, E.

  • Author_Institution
    Fujitsu Ltd., Tokyo, Japan
  • fYear
    2003
  • fDate
    29-31 Oct. 2003
  • Firstpage
    160
  • Lastpage
    161
  • Abstract
    In this paper, 3D proximity effect correction for multi-layer structures in electron beam lithography was studied. The image diagram of scattered electrons in 3-layer structures (Al, W/SiO/sub 2/, Si) was shown.
  • Keywords
    aluminium; electron beam lithography; elemental semiconductors; multilayers; proximity effect (lithography); silicon; silicon compounds; tungsten; 3D proximity effect; Al-W-SiO/sub 2/-Si; electron beam lithography; image diagram; multilayer structures; scattered electrons; Aluminum; Backscatter; Electron beams; Electronic mail; Lithography; Mie scattering; Plugs; Proximity effect; Tungsten; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-040-2
  • Type

    conf

  • DOI
    10.1109/IMNC.2003.1268625
  • Filename
    1268625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2579057