Title :
3D proximity effect correction for multi-layer structures in EB lithography
Author :
Ogino, K. ; Hoshino, H. ; Machida, Y. ; Osawa, M. ; Arimoto, H. ; Maruyama, T. ; Kawamura, E.
Author_Institution :
Fujitsu Ltd., Tokyo, Japan
Abstract :
In this paper, 3D proximity effect correction for multi-layer structures in electron beam lithography was studied. The image diagram of scattered electrons in 3-layer structures (Al, W/SiO/sub 2/, Si) was shown.
Keywords :
aluminium; electron beam lithography; elemental semiconductors; multilayers; proximity effect (lithography); silicon; silicon compounds; tungsten; 3D proximity effect; Al-W-SiO/sub 2/-Si; electron beam lithography; image diagram; multilayer structures; scattered electrons; Aluminum; Backscatter; Electron beams; Electronic mail; Lithography; Mie scattering; Plugs; Proximity effect; Tungsten; Wiring;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268625
