• DocumentCode
    2579090
  • Title

    Applications of germanium to low temperature micro-machining

  • Author

    Biao Li ; Bin Xiong ; Linan Jiang ; Yitshak Zohar ; Man Wong

  • Author_Institution
    Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
  • fYear
    1999
  • fDate
    21-21 Jan. 1999
  • Firstpage
    638
  • Lastpage
    643
  • Abstract
    Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350/spl deg/C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.
  • Keywords
    Raman spectra; X-ray diffraction; chemical vapour deposition; elemental semiconductors; etching; germanium; internal stresses; micromachining; micromechanical devices; rapid thermal annealing; scanning electron microscopy; semiconductor growth; semiconductor thin films; Ge; LPCVD; MEMS structural material; RTA; SEM; XRD spectra; compatibility with Si microfabrication; gas phase etch selectivity; liquid phase etch selectivity; low deposition temperature; low temperature micromachining; micro-Raman spectra; polycrystalline films; residual stress; sacrificial material; scaling; sensor material; single crystal films; Circuits; Etching; Fabrication; Germanium; Micromechanical devices; Residual stresses; Semiconductor materials; Sputtering; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1999. MEMS '99. Twelfth IEEE International Conference on
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5194-0
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1999.746902
  • Filename
    746902