DocumentCode
2579100
Title
Microwave performance of surface channel diamond MESFETs
Author
Calvani, P. ; Corsaro, A. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Carta, S. ; Limiti, E.
Author_Institution
Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
fYear
2009
fDate
2-5 June 2009
Firstpage
200
Lastpage
204
Abstract
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Keywords
Schottky gate field effect transistors; diamond; C; metal semiconductor field effect transistors; microwave performance; polycrystalline diamond samples; submicron gate; surface channel diamond MESFET; Electric breakdown; FETs; Grain size; Hydrogen; Laser radar; MESFETs; Plasma temperature; Surface treatment; Thermal conductivity; Vacuum breakdown;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location
Traverse City, MI
Print_ISBN
978-1-4244-4695-7
Electronic_ISBN
978-1-4244-4696-4
Type
conf
DOI
10.1109/NMDC.2009.5167575
Filename
5167575
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