Piezoresistive sensor technology for RFMEMS using p-type polycrystalline diamond

Author

Cao, Zongliang ; Aslam, Dean

Author_Institution

Electr. & Comput. Eng. Dept., Michigan State Univ., Lansing, MI, USA

fYear

2009

fDate

2-5 June 2009

Firstpage

190

Lastpage

195

Abstract

Design, simulation, fabrication and testing of p-type polycrystalline diamond (poly-C) piezoresistive RFMEMS is reported for the first time. The use piezoresistive detection in RFMEMS can lead to an output impedance in the ranges of 20 - 500 Omega and several MOmega for intra- and inter-grain piezoresistors, respectively. The inter-grain gauge factor of the poly-C film with a resistivity of 22 Omega ldr cm was estimated to be over 20. An Ohmic contact with a contact resistance of 5.21 MOmega was achieved by using a highly-doped poly-C interlayer between metal and lightly-doped piezoresistor.

Keywords

contact resistance; diamond; electrical resistivity; elemental semiconductors; micromechanical devices; ohmic contacts; piezoresistive devices; semiconductor doping; semiconductor thin films; C:Jk; Ohmic contact; contact resistance; doping; gauge factor; inter-grain piezoresistors; intra-grain piezoresistors; output impedance; p-type polycrystalline diamond; piezoresistive detection; piezoresistive sensor technology; radio frequency micro electro mechanical systems; resistance 20 ohm to 500 ohm; resistance 5.21 Mohm; resistivity; thin films; Capacitive sensors; Chemical sensors; Chemical vapor deposition; Conductivity; Frequency; Grain boundaries; Impedance; Micromechanical devices; Piezoresistance; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE

Conference_Location

Traverse City, MI

Print_ISBN

978-1-4244-4695-7

Electronic_ISBN

978-1-4244-4696-4

Type

conf

DOI

10.1109/NMDC.2009.5167579

Filename

5167579