Title :
Material characterization and process modeling issues of high-k dielectrics for FET applications
Author :
Kang, Jung Han ; Kim, Chang Eun ; Kim, Myoung-Seok ; Myoung, Jae-min ; Yun, Ilgu
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
In this paper, characterization and modeling issues of high-k dielectrics are reviewed and investigated. At first, thermal and plasma enhanced atomic layer deposition (T-ALD and PE-ALD) process effects on high-k dielectric thin film characteristics is analyzed and neural network (NNet) process modeling methodology applied to high-k thin film processing is reviewed. Characteristic variations of high-k dielectric layers and process variation effects are then examined. Comparison of electrical characteristic variation and post-metallization annealing (PMA) effects on different high-k dielectric thin film grown by molecular beam epitaxy (MOMBE) process is also presented. Annealing effects in different ambient gas environments on device characteristics are also examined. Finally, the nanowire FET using the ZnO nanowire on HfO2 dielectrics is presented for the next-generation FET applications.
Keywords :
II-VI semiconductors; annealing; atomic layer deposition; field effect transistors; hafnium compounds; high-k dielectric thin films; molecular beam epitaxial growth; nanowires; plasma deposition; semiconductor device metallisation; semiconductor device models; semiconductor epitaxial layers; zinc compounds; FET; HfO2; MOMBE process; PE-ALD process; PMA effects; T-ALD process; ZnO; high-k dielectric thin film growth; molecular beam epitaxy process; nanowires; neural network process modeling; plasma enhanced atomic layer deposition; post-metallization annealing effects; thermally enhanced atomic layer deposition; Annealing; Dielectric thin films; FETs; High K dielectric materials; High-K gate dielectrics; Molecular beam epitaxial growth; Plasma applications; Plasma materials processing; Plasma properties; Sputtering; high-k dielectric; modeling; nanowire FET;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
DOI :
10.1109/NMDC.2009.5167580
