Author :
Kudo, H. ; Ohtsuka, S. ; Arakawa, T. ; Izumi, T. ; Shoji, S. ; Sato, H. ; Kobayashi, H. ; Mori, K. ; Homma, T. ; Osaka, T. ; Mitsuda, K. ; Yamasaki, N.Y. ; Fujimoto, R. ; Iyomoto, Naoko ; Oshima, T. ; Futamoto, K. ; Takei, Y. ; Ichitsubo, T. ; Fujimori, T
Abstract :
In this paper we developed through-wafer interconnections using only a simple fabrication process. The interconnection was successfully transformed into the superconducting state. A current density of 13 cm/sup 2//mA was obtained in the superconducting state. We realize high energy-resolution X-ray imaging using the superconducting through-wafer interconnections.
Keywords :
X-ray imaging; critical current density (superconductivity); electrodeposits; image sensors; metallic thin films; proximity effect (superconductivity); superconducting interconnections; superconducting thin films; tin; type I superconductors; Sn; current density; enhanced X-ray image sensors; high energy-resolution X-ray imaging; superconducting state; via hole based superconducting wiring method; wafer interconnections; Copper; Electrodes; Fabrication; Image sensors; Sensor arrays; Superconducting epitaxial layers; Superconducting films; Tin; Wiring; X-ray imaging;
