DocumentCode :
2579311
Title :
Mini-rank: Adaptive DRAM architecture for improving memory power efficiency
Author :
Zheng, Hongzhong ; Lin, Jiang ; Zhang, Zhao ; Gorbatov, Eugene ; David, Howard ; Zhu, Zhichun
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL
fYear :
2008
fDate :
8-12 Nov. 2008
Firstpage :
210
Lastpage :
221
Abstract :
The widespread use of multicore processors has dramatically increased the demand on high memory bandwidth and large memory capacity. As DRAM subsystem designs stretch to meet the demand, memory power consumption is now approaching that of processors. However, the conventional DRAM architecture prevents any meaningful power and performance trade-offs for memory-intensive workloads. We propose a novel idea called mini-rank for DDRx (DDR/DDR2/DDR3) DRAMs, which uses a small bridge chip on each DRAM DIMM to break a conventional DRAM rank into multiple smaller mini-ranks so as to reduce the number of devices involved in a single memory access. The design dramatically reduces the memory power consumption with only a slight increase on the memory idle latency. It does not change the DDRx bus protocol and its configuration can be adapted for the best performance-power trade-offs. Our experimental results using four-core multiprogramming workloads show that using x32 mini-ranks reduces memory power by 27.0% with 2.8% performance penalty and using x16 mini-ranks reduces memory power by 44.1% with 7.4% performance penalty on average for memory-intensive workloads, respectively.
Keywords :
DRAM chips; logic design; low-power electronics; memory architecture; storage management chips; system buses; DDRx bus protocol; DRAM dual in-line memory; adaptive DRAM architecture; bridge chip; memory bandwidth; memory power consumption; memory power efficiency; memory-intensive workload; multicore processor; performance-power trade-off; Bandwidth; Bridges; Concurrent computing; Delay; Energy consumption; Frequency; Memory architecture; Multicore processing; Random access memory; SDRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microarchitecture, 2008. MICRO-41. 2008 41st IEEE/ACM International Symposium on
Conference_Location :
Lake Como
ISSN :
1072-4451
Print_ISBN :
978-1-4244-2836-6
Electronic_ISBN :
1072-4451
Type :
conf
DOI :
10.1109/MICRO.2008.4771792
Filename :
4771792
Link To Document :
بازگشت