Title :
A dual gate flash EEPROM cell with two-bits storage capacity
Author :
Lorenzini, M. ; Rudan, M. ; Baccarani, G.
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
In this paper, a dual-gate flash EEPROM cell is proposed which allows the storage of two bits at the expense of a slight increase in cell size. Extensive simulations show that the basic functions of the flash cell, namely reading, programming and erasing are possible with a suitable setting of the applied voltages. A simplified model based on the equivalent circuit of the cell allows a qualitative interpretation of the obtained results, and is of great help for the optimization of the cell parameters
Keywords :
EPROM; PLD programming; equivalent circuits; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; dual gate flash EEPROM cell; equivalent circuit; erasing; model; programming; reading; two-bits storage capacity; Capacitance; Circuit simulation; Doping profiles; EPROM; Equivalent circuits; Nonvolatile memory; Numerical simulation; Threshold voltage; Voltage control;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-3510-4
DOI :
10.1109/NVMT.1996.534676
