Title :
X-ray luminescence of ZnMoO4 crystals developed in the framework of the LUMINEU program
Author :
Degoda, V.Ya. ; Danevich, F.A. ; Coron, N. ; Ivanov, I.M. ; Kogut, Ya.P. ; Makarov, E.P. ; de Marcillac, P. ; Nasonov, S.G. ; Torres, L. ; Tretyak, V.I. ; Shlegel, V.N. ; Vasiliev, Ya.V. ; Velazquez, M. ; Zhdankov, V.N.
Author_Institution :
Kyiv Nat. Taras Shevchenko Univ., Kiev, Ukraine
Abstract :
Luminescence of ZnMoO4 crystals developed in the framework of the LUMINEU double beta decay project under X-ray irradiation of different doses was studied in the temperature interval from 1.4 K to 295 K. We have found that concentration of shallow traps in ZnMoO4 crystals is much greater than the concentration of deep traps, and only shallow traps absorb a small part of the luminescence.
Keywords :
X-ray effects; electron-hole recombination; photoluminescence; zinc compounds; LUM1NEU double beta decay project program; X-ray irradiation; X-ray luminescence; ZnMoO4; deep trap concentration; recombination centers; shallow trap concentration; temperature 1.4 K to 295 K; Next generation networking; RNA; X-ray luminescence; ZnMoO4 crystals; dose and temperature dependence of luminescence; double beta decay; recombination centers; traps;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on
Conference_Location :
Lviv
Print_ISBN :
978-1-4799-5960-0
DOI :
10.1109/OMEE.2014.6912444
