Lossy model of diode packages: an alternative method for exact evaluation of active chip parameters

Author

Kazi, K. ; Szendrenyi, B.B. ; Mojzes, I.

Author_Institution

Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary

fYear

1989

fDate

13-15 June 1989

Firstpage

1267

Abstract

A systematic method of obtaining accurate models of microwave active device packages is reported. Using a set of offset shorts as coaxial line extensions. the effect of the lossy elements of the package can be determined with high accuracy. Encapsulated varactor diode chips are then investigated. The Q-factor of the encapsulated device, calculated by applying the model to experimental measurements, shows a large amount of degradation that depends on the ratio of the package parasitics to the device parameters. A comparison of experimental results with the results obtained with the model shows good agreement up to 20 GHz for S4 type packages.<>

Keywords

Q-factor; encapsulation; equivalent circuits; losses; microwave measurement; modelling; packaging; semiconductor device testing; semiconductor diodes; solid-state microwave devices; varactors; 20 GHz; Q-factor; S4 type packages; VANA system; active chip parameters; coaxial line extensions; diode packages; encapsulated device; lossy model; measurement technique; microwave active device packages; microwave automatic vector network analyser; offset shorts; package parasitics; Bonding; Coaxial components; Conductors; Diodes; Microwave devices; Microwave measurements; Microwave theory and techniques; Semiconductor device measurement; Semiconductor device packaging; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38957

Filename

38957