DocumentCode
2580068
Title
An estimation method of the channel temperature of power MOS devices
Author
Bergogne, Dominique ; Allard, Bruno ; Morel, Hervé
Author_Institution
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Volume
3
fYear
2000
fDate
2000
Firstpage
1594
Abstract
A method is presented to characterize the IGBT (insulated gate bipolar transistor) from a power module to obtain an internal temperature estimation. A prototype is described. The technique is compatible with operating PWM-based converters
Keywords
PWM power convertors; choppers (circuits); insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; thermal analysis; IGBT; PWM-based converters; channel temperature; chopper circuit; estimation method; insulated gate bipolar transistor; internal temperature estimation; power MOS devices; power module; Circuit simulation; Hardware; Insulated gate bipolar transistors; Insulation; MOS devices; Microelectronics; Power electronics; Prototypes; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location
Galway
ISSN
0275-9306
Print_ISBN
0-7803-5692-6
Type
conf
DOI
10.1109/PESC.2000.880543
Filename
880543
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