DocumentCode :
2580090
Title :
Influence of gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode
Author :
Lefebvre, Stéphane ; Costa, François ; Miserey, Francis
Author_Institution :
LESIR, ENS de Cachan, France
Volume :
3
fYear :
2000
fDate :
2000
Firstpage :
1606
Abstract :
In order to use a power MOS transistor in the ZVS mode at high switching frequencies, the output capacitance has to be maximal and the input capacitance minimal. These characteristics available in the datasheets have to be completed if necessary to choose the ideal transistor for application with minimal losses, and additional characterisations have to be realised in order to specify or complete the datasheets. In particular, it is necessary to be sure that all the cells of the MOS transistor can be opened in a short time before the voltage rise time at turn-off, in order to reduce as low as possible turn-off losses. The paper points out that the gate to source impedance characterises the ability of the device to turn-off very quickly and it is useful to choose a MOS transistor having minimal losses in very high switching frequency ZVS applications
Keywords :
capacitance; electric impedance; losses; power MOSFET; resonant power convertors; switching circuits; MOS transistor cells; ZVS; gate internal impedance; gate to source impedance; high frequency switching; input capacitance; losses; minimal losses; output capacitance; power MOS transistor; resonant converters; turn-off losses reduction; voltage rise time; Capacitance; Choppers; Diodes; Electrical resistance measurement; Impedance; MOSFETs; Resonance; Switching frequency; Testing; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location :
Galway
ISSN :
0275-9306
Print_ISBN :
0-7803-5692-6
Type :
conf
DOI :
10.1109/PESC.2000.880545
Filename :
880545
Link To Document :
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