Title :
Time evolution of Si-2p photoemission and SiO desorption during oxidation of Si(001) induced by supersonic O/sub 2/ molecular beams
Author :
Teraoka, Y. ; Yoshigoe, A. ; Moritani, K. ; Hachiue, S.
Author_Institution :
Synchrotron Radiat. Res. Center, Japan Atomic Energy Res. Inst., Hyogo, Japan
Abstract :
In this paper, the E/sub t/ effects for the Si(001) initial oxidation under 1000 K are discussed on the basis of the time evolution of the oxide-layer thickness, each Si/sup n+/ component and the SiO desorption rate.
Keywords :
desorption; elemental semiconductors; molecule-surface impact; oxidation; photoelectron spectra; silicon; silicon compounds; 1000 K; Si; Si-2p photoemission; SiO; SiO desorption; oxidation; oxide-layer thickness; supersonic O/sub 2/ molecular beams; time evolution; Atomic beams; Atomic measurements; Molecular beams; Oxidation; Photoelectricity; Pressure control; Spectroscopy; Strontium; Synchrotron radiation; Temperature control;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268728
