DocumentCode
2580716
Title
Ge dot array formation using small convex position anchors
Author
Kitayama, Daisuke ; Yoshizawa, T. ; Suda, Y.
Author_Institution
Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
234
Lastpage
235
Abstract
In this paper, we apply new formation mechanisms to the method of artificially positioned Ge dot array formation on Si. In this method, Ge migrates and coalesces at small convex structures which are formed by Si patterning and function as a marker and an anchor for Ge dot positioning.
Keywords
annealing; diffusion; elemental semiconductors; etching; germanium; semiconductor quantum dots; Ge; Ge dot array; Ge dot positioning; Ge migration; Si; Si patterning; annealing; convex position anchors; convex structures; etching; Annealing; Bonding; Crystalline materials; Earth; Etching; Photonic crystals; Silicon germanium; Temperature; Testing; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268731
Filename
1268731
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