Title :
Electrical characterization of InAs/InP self-assembled quantum dots by deep level transient spectroscopy
Author :
Kim, E.K. ; Kim, J.S. ; Hwang, H. ; Park, K. ; Yoon, E. ; Kim, J.H. ; Park, I.-W. ; Park, Y.J.
Author_Institution :
Dept. of Phys., Hanyang Univ., Seoul, South Korea
Abstract :
In this paper, electrical characterization of InAs/InP self-assembled quantum dots is studied. The PL signals shown a peak at 0.67 eV with a full-width at half-maximum of about 50 meV.
Keywords :
III-V semiconductors; band structure; deep level transient spectroscopy; indium compounds; photoluminescence; semiconductor quantum dots; InAs-InP; InAs/InP self-assembled quantum dots; PL spectra; deep level transient spectroscopy; electrical properties; Atomic force microscopy; Atomic measurements; Indium phosphide; Optical buffering; Physics; Quantum capacitance; Quantum dots; Spectroscopy; Temperature distribution; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268732
