DocumentCode
2580740
Title
Effects of InGaAs insertion layer on the properties of high-density InAs/AlAs quantum dots
Author
Park, S. ; Tatebayashi, J. ; Arakawa, Y.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
238
Lastpage
239
Abstract
In this paper, we have investigated the effects of InGaAs IL on the properties of InAs/AlAs quantum dots compared to GaAs IL. The samples used in this study were grown on semi-insulating GaAs (100) substrates by MOCVD.
Keywords
CVD coatings; III-V semiconductors; aluminium compounds; indium compounds; photoluminescence; semiconductor quantum dots; GaAs; InGaAs insertion layer; InGaAs-InAs-AlAs; high-density InAs/AlAs quantum dots; semi-insulating GaAs (100) substrates; Active matrix organic light emitting diodes; Aluminum; Atom optics; Gallium arsenide; Indium gallium arsenide; MOCVD; Quantum dots; Substrates; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268733
Filename
1268733
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