Title :
Effects of InGaAs insertion layer on the properties of high-density InAs/AlAs quantum dots
Author :
Park, S. ; Tatebayashi, J. ; Arakawa, Y.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
In this paper, we have investigated the effects of InGaAs IL on the properties of InAs/AlAs quantum dots compared to GaAs IL. The samples used in this study were grown on semi-insulating GaAs (100) substrates by MOCVD.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; indium compounds; photoluminescence; semiconductor quantum dots; GaAs; InGaAs insertion layer; InGaAs-InAs-AlAs; high-density InAs/AlAs quantum dots; semi-insulating GaAs (100) substrates; Active matrix organic light emitting diodes; Aluminum; Atom optics; Gallium arsenide; Indium gallium arsenide; MOCVD; Quantum dots; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268733
