Design approach of newly developed 3.3kV IGBT modules

Author

Iura, Shinichi ; Donlon, John F. ; Thal, Eckhard

Author_Institution

MITSUBISHI Electr., Fukuoka

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

8

Abstract

High voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3 kV level, a new IGBT and free wheeling diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi method experiments to find the most influential design factors and to secure the most robust design.

Keywords

Taguchi methods; insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; FWD chip set; HVIGBT modules; Taguchi methods; free wheeling diode chip set; high voltage IGBT modules; insulated gate bipolar transistors; power bipolar transistors; voltage 3.3 kV; Chip scale packaging; Europe; Insulated gate bipolar transistors; Performance loss; Robustness; Semiconductor diodes; Semiconductor optical amplifiers; Short circuit currents; Uniform resource locators; Voltage; Design; Device characterisation; Free wheel diode (FWD); IGBT; Power semiconductor device; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417346

Filename

4417346