DocumentCode
2581006
Title
Patterning of self-assembly surfactant templated nanoporous silica thin film as an ultra low-k dielectric
Author
Cho, A.T. ; Pan, F.M. ; Yen, C.W. ; Chen, J.Y. ; Chen, Y.J. ; Chao, K.J.
Author_Institution
Nat. Nano Device Lab., Hsinchu, Taiwan
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
262
Lastpage
263
Abstract
We have studied dry etching characteristics of the the nanoporous silica dielectric using Ar/CHF/sub 3//CF/sub 4/ as the plasma gas source. Trimethylsilylation by hexamethyldisilazane (HMDS) vapor treatment is used to improve hydrophobicity of nanoporous silica dielectrics. During dry etch and resist ashing, hydrophobicity of the nanoporous silica thin films is destroyed, leading to serious degradation in the dielectric property.
Keywords
dielectric materials; dielectric thin films; nanoporous materials; photoresists; self-assembly; silicon compounds; sputter etching; surfactants; SiO/sub 2/; dielectric materials; dielectric property; dry etching; hydrophobicity; nanoporous silica thin film; resist ashing; self-assembly surfactant templated film; Argon; Dielectric thin films; Dry etching; Nanoporous materials; Plasma applications; Plasma properties; Plasma sources; Resists; Self-assembly; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268746
Filename
1268746
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