A monolithic DC-1.6 GHz digital attenuator

Author

Bayruns, J. ; Wallace, P. ; Scheinberg, N.

Author_Institution

ANADIGICS Inc., Warren, NJ, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

1295

Abstract

A 5-bit attenuator with integral TTL-compatible switch drivers is described. The unit has a 15.5 dB attenuation range in 0.5 dB increments, 3 dB insertion loss, operating frequency range from DC to 1.6 GHz, and 1.4:1 input/output VSWR (voltage standing-wave ratio) over that frequency range. The unit uses GaAs MESFET integrated circuit technology. The performance is typified by its integral and differential linearity (<0.25 dB at 1.6 GHz and <0.1 dB below 1.6 GHz) and 15-ns RF switching time. The power performance is typified by its <250-mW power consumption and 20-dBm maximum RF input power level.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; attenuators; digital integrated circuits; field effect integrated circuits; gallium arsenide; 0 to 1.6 GHz; 15 ns; 250 mW; 3 dB; GaAs; III-V semiconductor; MESFET integrated circuit technology; RF switching time; digital attenuator; insertion loss; integral TTL-compatible switch drivers; monolithic IC; power consumption; Attenuation; Attenuators; Driver circuits; Gallium arsenide; Insertion loss; Integrated circuit technology; MESFET integrated circuits; Radio frequency; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38964

Filename

38964