Title :
Application of ozone ashing dry technology in the fabrication of mesoporous silica film with ultra-low dielectric constant and high mechanical stability
Author :
Cho, A.T. ; Pan, F.M. ; Yen, C.W. ; Chen, J.Y. ; Chen, Y.J. ; Chao, K.J.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
Ozone ashing dry technology has been applied in the fabrication of mesoporous silica film with ultra-low dielectric constant. The process removes the organic template efficiently at relatively low temperature. The film has an ordered pore structure and uniform pore diameter, which lead to a good mechanical strength and better electrical reliability.
Keywords :
Young´s modulus; dielectric thin films; hardness; mechanical stability; mechanical strength; permittivity; porous materials; reliability; silicon compounds; sputter etching; SiO/sub 2/; dielectric constant; electrical reliability; mechanical stability; mechanical strength; mesoporous silica film; organic template; ozone ashing dry technology; pore structure; Calcination; Copper; Dielectric constant; Fabrication; High-K gate dielectrics; Mechanical factors; Mesoporous materials; Silicon compounds; Stability; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268747
