Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology

Author

Komiak, James J. ; Chu, Kanin ; Chao, Pane Chane

Author_Institution

BAE Syst. Electron. Solutions, Nashua, NH, USA

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

Design and performance of power amplifiers that have established new benchmarks for 2 to 20 GHz power are reported. The Dual Field Plate (DFP) amplifier achieved a P_3dB of 26.3 Watts max, 15.4 Watts average, 7.1 Watts min with 38.3 % max, 19.8 % average, 5.9 % min PAE and 11.2 dB max, 8.6 dB average, 5.0 dB min power gain from 2 to 20 GHz. Using an improved device, the No FP amplifier achieved a P_3dB of 21.6 Watts max, 16.0 Watts average, 9.9 Watts min with 35.7 % max, 25.9 % average, 15.3 % min PAE and 11.1 dB max, 9.7 dB average, 8.0 dB min power gain from 2 to 20 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; field effect MMIC; gallium compounds; integrated circuit design; power HEMT; wide band gap semiconductors; GaN; HEMT power amplifier MMIC; dual field plate amplifier; frequency 2 GHz to 20 GHz; no-field plate amplifier; power amplifier design; Gain; Gallium nitride; HEMTs; MMICs; Microwave amplifiers; Power amplifiers; Wideband; Gallium Nitride (GaN); HEMT; MMIC; distributed amplifiers; power amplifiers; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972561

Filename

5972561