DocumentCode
2581101
Title
The future of EUV lithography
Author
Kemp, K.
Author_Institution
Motorola Assignee at Int. SeMaTech, Austin, TX, USA
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
274
Abstract
Summary form only given. Extreme ultraviolet lithography (EUVL) is the exposure technology of choice to succeed optical lithography for volume semiconductor manufacturing at feature sizes below 50 nm. EUVL uses radiation at 13.5 nm from a plasma source to project an image using reflective optics and a reflective mask.
Keywords
integrated circuit manufacture; masks; semiconductor device manufacture; ultraviolet lithography; 13.5 nm; 50 nm; EUV lithography; image projection; optical lithography; plasma source; reflective mask; reflective optics; volume semiconductor manufacturing; Electron optics; Industrial control; Lithography; Manufacturing industries; Particle beam optics; Plasma sources; Semiconductor device manufacture; Ultraviolet sources; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268752
Filename
1268752
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