• DocumentCode
    2581115
  • Title

    Projected applications, status and plans for Honeywell high density, high performance, nonvolatile memory

  • Author

    Granley, Gerald B. ; Hurst, Allan T.

  • Author_Institution
    Honeywell Inc., USA
  • fYear
    1996
  • fDate
    24-26 Jun 1996
  • Firstpage
    138
  • Abstract
    The foundation and basis for the Honeywell nonvolatile memory program is the proven, radiation hard, CMOS technology, combined with the proven, radiation hard, MRAM nonvolatile memory technology. These demonstrated capabilities allow the Honeywell team to focus on the most critical elements, the production release of the current AMR nonvolatile products and the development of scalable GMR storage elements capable of supporting 4 Gbit/cm2 nonvolatile memory technology
  • Keywords
    CMOS memory circuits; giant magnetoresistance; magnetic film stores; magnetoresistive devices; radiation hardening (electronics); random-access storage; AMR nonvolatile products; CMOS SRAM; Honeywell nonvolatile memory program; high density high performance nonvolatile memory; radiation hard CMOS technology; radiation hard MRAM nonvolatile memory technology; scalable GMR storage elements; CMOS technology; Costs; Magnetic films; Nonvolatile memory; Paper technology; Production; Random access memory; Semiconductor memory; Space technology; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-3510-4
  • Type

    conf

  • DOI
    10.1109/NVMT.1996.534686
  • Filename
    534686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2581115