Title :
Projected applications, status and plans for Honeywell high density, high performance, nonvolatile memory
Author :
Granley, Gerald B. ; Hurst, Allan T.
Author_Institution :
Honeywell Inc., USA
Abstract :
The foundation and basis for the Honeywell nonvolatile memory program is the proven, radiation hard, CMOS technology, combined with the proven, radiation hard, MRAM nonvolatile memory technology. These demonstrated capabilities allow the Honeywell team to focus on the most critical elements, the production release of the current AMR nonvolatile products and the development of scalable GMR storage elements capable of supporting 4 Gbit/cm2 nonvolatile memory technology
Keywords :
CMOS memory circuits; giant magnetoresistance; magnetic film stores; magnetoresistive devices; radiation hardening (electronics); random-access storage; AMR nonvolatile products; CMOS SRAM; Honeywell nonvolatile memory program; high density high performance nonvolatile memory; radiation hard CMOS technology; radiation hard MRAM nonvolatile memory technology; scalable GMR storage elements; CMOS technology; Costs; Magnetic films; Nonvolatile memory; Paper technology; Production; Random access memory; Semiconductor memory; Space technology; Wire;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-3510-4
DOI :
10.1109/NVMT.1996.534686
