Title :
A low power SOI MOSFET photodetector with a nanometer scale wire for highly integrated circuit
Author :
Hong Goo Choi ; Yeon-Shik Choi ; Young Chang Jo ; Hoon Kim
Author_Institution :
NANO Scale Quantum Devices Res. Center, Korea Electron. Technol. Inst., KyungGi-Do, South Korea
Abstract :
In this paper, the optical and electric characteristics of SOI MOSFET photodetector device with a nanometer scale wire are investigated.
Keywords :
MESFET integrated circuits; elemental semiconductors; nanowires; photoconductivity; photodetectors; power MOSFET; silicon; silicon-on-insulator; Si; electrical properties; integrated circuit; nanometer scale wire; optical properties; power SOI MOSFET photodetector; Annealing; Electrodes; MOSFET circuits; Nanoscale devices; Oxidation; Photoconductivity; Photodetectors; Power MOSFET; Silicon; Wire;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268763
