Measurement of shallow dopant profile using scanning capacitance microscopy

Author

Goragot, W. ; Takai, M.

Author_Institution

Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Toyonaka, Japan

fYear

2003

fDate

29-31 Oct. 2003

Firstpage

306

Lastpage

307

Abstract

Scanning capacitance microscopy (SCM) is one of the possible methods to measure two dimensional (2D) carrier profiles with nondestructive and high resolution. SCM has been developed for nonjunction structures in previous works. In this paper, the experimental dC/dV data were converted to the carrier current density profile using a simulated relation between dC/dV and the carrier concentration. The experimental data were found to be consistent with one dimensional simulation profile with high spatial resolution.

Keywords

boron; carrier density; current density; doping profiles; elemental semiconductors; p-n junctions; scanning probe microscopy; silicon; 100 nm; 5 nm; Si; carrier concentration; carrier current density profile; one dimensional simulation profile; p-n junctions; scanning capacitance microscopy; shallow dopant profile; silicon; spatial resolution; Annealing; Capacitance measurement; Charge carrier density; Charge carrier processes; MOSFET circuits; Materials science and technology; Microscopy; P-n junctions; Spatial resolution; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-040-2

Type

conf

DOI

10.1109/IMNC.2003.1268768

Filename

1268768