Title :
Measurement of shallow dopant profile using scanning capacitance microscopy
Author :
Goragot, W. ; Takai, M.
Author_Institution :
Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Toyonaka, Japan
Abstract :
Scanning capacitance microscopy (SCM) is one of the possible methods to measure two dimensional (2D) carrier profiles with nondestructive and high resolution. SCM has been developed for nonjunction structures in previous works. In this paper, the experimental dC/dV data were converted to the carrier current density profile using a simulated relation between dC/dV and the carrier concentration. The experimental data were found to be consistent with one dimensional simulation profile with high spatial resolution.
Keywords :
boron; carrier density; current density; doping profiles; elemental semiconductors; p-n junctions; scanning probe microscopy; silicon; 100 nm; 5 nm; Si; carrier concentration; carrier current density profile; one dimensional simulation profile; p-n junctions; scanning capacitance microscopy; shallow dopant profile; silicon; spatial resolution; Annealing; Capacitance measurement; Charge carrier density; Charge carrier processes; MOSFET circuits; Materials science and technology; Microscopy; P-n junctions; Spatial resolution; Very large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268768
