Transient response of PIN limiter diodes

Author

Tan, R.J. ; Ward, A.L. ; Kaul, R.

Author_Institution

Harry Diamond Lab., Adelphi, MD, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

1303

Abstract

Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic regions of the PIN diode. One interesting analytic result is that a low level of p-type doping in the intrinsic region reduces the transient turn-on response time and reduces the turn-on peak voltage. The holes in the intrinsic region help compensate for the lower hole mobility in Si.<>

Keywords

elemental semiconductors; p-i-n diodes; silicon; solid-state microwave devices; transient response; DC dynamic impedance measurements; PIN limiter diodes; RF measurements; Si; dynamic responses; fast-risetime microwave pulses; intrinsic region; microwave devices; p-i-n diodes; p-type doping; physical parameters; semiconductors; transient response; transient turn-on response time; turn-on peak voltage; Circuits; Current measurement; Diodes; Impedance; Microwave measurements; Packaging; Pulse measurements; Radio frequency; Transient response; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38966

Filename

38966