Photonic performance of Si nanocluster grown by laser assistance

Author

Lee, Ching-Ting

Author_Institution

Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2005

fDate

15-16 Aug. 2005

Abstract

A CO₂ laser was used in a conventional plasma-enhanced chemical vapor deposition system to assist the decomposition of SiH₄ molecules and also to separate the Si clusters from Si oxide matrix. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65eV to 1.92eV without post-annealing. A degradation of photoluminescence (PL) intensity by irradiating the sample with helium-cadmium (He-Cd) laser was observed. The dependence of PL degradation on long-term irradiation of He-Cd laser was investigated. Post-annealing in H₂ could also help to increase the PL intensity plays by passivating the defect centers in as-deposited samples.

Keywords

gas lasers; laser beam annealing; metal clusters; nanoparticles; plasma CVD; silicon; silicon compounds; CO₂; CO₂ laser; H₂; He-Cd; Si; Si clusters; Si nanocluster; Si oxide matrix; SiH₄; SiH₄ molecules; decomposition; defect centers; helium-cadmium laser; laser assistance; photoluminescence intensity; photoluminescence light emission; photonic performance; plasma-enhanced chemical vapor deposition; post-annealing; Absorption; Chemical lasers; Chemical vapor deposition; Gas lasers; Nanostructures; Photoluminescence; Plasma chemistry; Plasma temperature; Silicon; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Information Technology Conference, 2005.

Print_ISBN

0-7803-9328-7

Type

conf

DOI

10.1109/EITC.2005.1544384

Filename

1544384