Title :
Photonic performance of Si nanocluster grown by laser assistance
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A CO2 laser was used in a conventional plasma-enhanced chemical vapor deposition system to assist the decomposition of SiH4 molecules and also to separate the Si clusters from Si oxide matrix. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65eV to 1.92eV without post-annealing. A degradation of photoluminescence (PL) intensity by irradiating the sample with helium-cadmium (He-Cd) laser was observed. The dependence of PL degradation on long-term irradiation of He-Cd laser was investigated. Post-annealing in H2 could also help to increase the PL intensity plays by passivating the defect centers in as-deposited samples.
Keywords :
gas lasers; laser beam annealing; metal clusters; nanoparticles; plasma CVD; silicon; silicon compounds; CO2; CO2 laser; H2; He-Cd; Si; Si clusters; Si nanocluster; Si oxide matrix; SiH4; SiH4 molecules; decomposition; defect centers; helium-cadmium laser; laser assistance; photoluminescence intensity; photoluminescence light emission; photonic performance; plasma-enhanced chemical vapor deposition; post-annealing; Absorption; Chemical lasers; Chemical vapor deposition; Gas lasers; Nanostructures; Photoluminescence; Plasma chemistry; Plasma temperature; Silicon; Surface emitting lasers;
Conference_Titel :
Emerging Information Technology Conference, 2005.
Print_ISBN :
0-7803-9328-7
DOI :
10.1109/EITC.2005.1544384
