DocumentCode
2581579
Title
Highly selective isotropic etching processes
Author
Borel, S. ; Arvet, C. ; Bilde, J. ; Louis, D.
Author_Institution
CEA, Grenoble, France
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
334
Lastpage
335
Abstract
We show how it was possible to develop an etching process of SiGe with a high selectivity to similar materials such as nitride, oxide and even pure silicon. The study of the material and process parameters has lead to an understanding of the etching mechanisms and permitted to control the selectivity so as to improve or invert it, which gave rise to new ideas of integration.
Keywords
Ge-Si alloys; elemental semiconductors; multilayers; semiconductor materials; silicon; sputter etching; Si/sub 0.8/Ge/sub 0.2/:Si; SiGe-Si; isotropic etching; Chemicals; Etching; Germanium alloys; Germanium silicon alloys; MOS devices; MOSFETs; Plasma applications; Plasma chemistry; Plasma devices; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268782
Filename
1268782
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