Development of low phase noise millimeter-wave sources using MMIC technology

Author

Wang, Huei ; Chang, Kwo-Wei ; Dow, Gee S. ; Allen, Barry R.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1996

fDate

5-7 Jun 1996

Firstpage

866

Lastpage

874

Abstract

Millimeter-wave (MMW) sources based on MMIC technology have been developed in the past few years at TRW. These MMW sources included MMIC fundamental mode VCOs, and frequency source modules which integrated several MMIC chips. The MMICs were fabricated using high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) technologies based on GaAs and InP materials. This paper summarizes the development status of our MMIC-based MMW sources. In particular, low phase noise MMW sources have been demonstrated with HBT device technology

Keywords

HEMT integrated circuits; MMIC oscillators; bipolar MIMIC; dielectric resonator oscillators; field effect MIMIC; heterojunction bipolar transistors; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 40 to 95 GHz; DRO; EHF; GaAs; HBT device technology; HEMT device technology; InP; MIMIC technology; MIMIC-based MM-wave sources; MIMICs; frequency source modules; fundamental mode VCO; heterojunction bipolar transistor; high electron mobility transistor; low phase noise MM-wave sources; millimeter-wave sources; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MMICs; MODFETs; Millimeter wave technology; Millimeter wave transistors; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-3309-8

Type

conf

DOI

10.1109/FREQ.1996.560268

Filename

560268