Title :
Bi-layer resist method for room-temperature nanoimprint lithography
Author :
Nakamatsu, K. ; Watanabe, K. ; Tone, K. ; Katase, T. ; Hattori, W. ; Ochiai, Y. ; Matsuo, T. ; Sasago, M. ; Namatsu, H. ; Komuro, M. ; Matsui, S.
Author_Institution :
Graduate Sch. of Sci., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
In this paper, we describe a bi-layer resist method for RT-NIL using HSQ (top-layer)/AZ photoresist (bottom-layer)structures.
Keywords :
nanolithography; photoresists; 293 to 298 K; bilayer resist method; hydrogensilsequioxane; photoresist structure; room temperature nanoimprint lithography; Adhesives; Dry etching; Educational institutions; Glass industry; Nanolithography; Resistance heating; Resists; Scanning electron microscopy; Substrates; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268786
