DocumentCode :
2581715
Title :
Development and application of a macro model for flash EEPROM design
Author :
O´Shea, Michael ; Concannon, Ann ; McCarthy, Kevin ; Lane, Bill ; Mathewson, Alan ; Slotboom, Michiel
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear :
2000
fDate :
2000
Firstpage :
192
Lastpage :
196
Abstract :
The inclusion of embedded flash memory in systems-on-chip designs enables the addition of many new features. However to enable designers to embed flash memory in an efficient and competent manner, they must have the capability to simulate full circuit operation. Therefore a flexible flash EEPROM model is required. An accurate and numerically efficient model for the transient and DC characteristics of Fowler Nordheim (FN) based Flash EEPROM cells has been developed. The model has been extensively validated, using read, program and erase operations. The model has also been applied to several applications, in a typical structure. These display the ability of the model to accelerate the design cycle for applications which require flash memory
Keywords :
application specific integrated circuits; circuit simulation; flash memories; integrated circuit design; integrated circuit modelling; transient analysis; Fowler Nordheim based cells; design cycle; embedded flash memory; erase operations; flash EEPROM design; full circuit operation; macro model; numerically efficient model; read operations; systems-on-chip designs; transient characteristics; Acceleration; CMOS process; Circuit simulation; Costs; EPROM; Electrons; Flash memory; Nonvolatile memory; Semiconductor device modeling; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC/SOC Conference, 2000. Proceedings. 13th Annual IEEE International
Conference_Location :
Arlington, VA
Print_ISBN :
0-7803-6598-4
Type :
conf
DOI :
10.1109/ASIC.2000.880700
Filename :
880700
Link To Document :
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