Title :
GaN HEMTs with pre-match for Ka-band with 18W
Author :
Takagi, Kazutaka ; Matsushita, Keiichi ; Masuda, Kazutoshi ; Nakanishi, Shinichiro ; Soejima, Tomohide ; Sakurai, Hiroyuki ; Onodera, Ken ; Shim, Jeoungchill ; Kawasaki, Hisao ; Takada, Yoshiharu ; Hirose, Mayumi ; Tsuda, Kunio
Author_Institution :
Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed with an achievable fmax of 138GHz. A 6.4mm gate periphery device was thereafter designed with pre-match circuits on the die and matching circuits on an alumina substrate at Ka-band. A saturated output power of 18.5W was achieved at 31GHz which to the best of our knowledge is the highest ever reported at Ka-band.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave circuits; wide band gap semiconductors; AlGaN-GaN; HEMT; frequency 138 GHz; frequency 31 GHz; high electron mobility transistors; power 18 W; power 18.5 W; pre-match circuits; Aluminum gallium nitride; Gallium nitride; HEMTs; MMICs; Substrates; AlGaN; GaN; HEMT; Ka-band; pre-match;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972618
