• DocumentCode
    2582050
  • Title

    GaN HEMTs with pre-match for Ka-band with 18W

  • Author

    Takagi, Kazutaka ; Matsushita, Keiichi ; Masuda, Kazutoshi ; Nakanishi, Shinichiro ; Soejima, Tomohide ; Sakurai, Hiroyuki ; Onodera, Ken ; Shim, Jeoungchill ; Kawasaki, Hisao ; Takada, Yoshiharu ; Hirose, Mayumi ; Tsuda, Kunio

  • Author_Institution
    Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed with an achievable fmax of 138GHz. A 6.4mm gate periphery device was thereafter designed with pre-match circuits on the die and matching circuits on an alumina substrate at Ka-band. A saturated output power of 18.5W was achieved at 31GHz which to the best of our knowledge is the highest ever reported at Ka-band.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave circuits; wide band gap semiconductors; AlGaN-GaN; HEMT; frequency 138 GHz; frequency 31 GHz; high electron mobility transistors; power 18 W; power 18.5 W; pre-match circuits; Aluminum gallium nitride; Gallium nitride; HEMTs; MMICs; Substrates; AlGaN; GaN; HEMT; Ka-band; pre-match;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972618
  • Filename
    5972618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2582050