Title :
RF characterization of epitaxial graphene nano ribbon field effect transistor
Author :
Meng, N. ; Fernandez, J. Ferrer ; Pichonat, E. ; Lancry, O. ; Vignaud, D. ; Dambrine, G. ; Happy, H.
Author_Institution :
Inst. of Electron., Microelectron. & Nanotechnol., CNRS, Villeneuve-d´´Ascq, France
Abstract :
RF characterization of epitaxial graphene nano ribbon field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of {0001} silicon carbide under UHV environment. Raman spectroscopy, AFM and Hall measurement were used to investigate the properties of graphene synthesized. Despite the Hall mobility was lower than 500 cm2/Vs, the intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 30 GHz were obtained. This work shows the strong potentiality of GNRFET in future high speed electronics.
Keywords :
atomic force microscopy; field effect transistors; graphene; nanoelectronics; pyrolysis; AFM; GNRFET; Hall measurement; RF characterization; Raman spectroscopy; UHV environment; epitaxial graphene nanoribbon field effect transistor; frequency 30 GHz; frequency 60 GHz; silicon carbide; thermal decomposition; Epitaxial growth; FETs; Logic gates; Performance evaluation; Radio frequency; Silicon carbide; RF; SiC; characterization; graphene; ribbon; transistor;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972627
