Title :
1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes
Author :
Brosselard, P. ; Jordà, X. ; Vellvehí, M. ; Pérez-Tomas, A. ; Godignon, P. ; Millán, J.
Author_Institution :
Campus Univ. Autonoma de Barcelona, Barcelona
Abstract :
A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25degC-300degC range while the Si-PiN is tested up to 200degC due to the Si temperature limitation 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications.
Keywords :
Schottky barriers; rectifying circuits; silicon compounds; wide band gap semiconductors; junction barrier Schottky diodes; rectifiers thermal behaviour; temperature 25 degC to 300 degC; temperature limitation; voltage 1.2 kV; Anodes; Electric variables; Manufacturing; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature distribution; Thermal conductivity; Uniform resource locators; Discrete power device; JBS diode; PiN diode; Schottky diode; Silicon Carbide;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417474
