DocumentCode
2582803
Title
1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes
Author
Brosselard, P. ; Jordà, X. ; Vellvehí, M. ; Pérez-Tomas, A. ; Godignon, P. ; Millán, J.
Author_Institution
Campus Univ. Autonoma de Barcelona, Barcelona
fYear
2007
fDate
2-5 Sept. 2007
Firstpage
1
Lastpage
9
Abstract
A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25degC-300degC range while the Si-PiN is tested up to 200degC due to the Si temperature limitation 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications.
Keywords
Schottky barriers; rectifying circuits; silicon compounds; wide band gap semiconductors; junction barrier Schottky diodes; rectifiers thermal behaviour; temperature 25 degC to 300 degC; temperature limitation; voltage 1.2 kV; Anodes; Electric variables; Manufacturing; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature distribution; Thermal conductivity; Uniform resource locators; Discrete power device; JBS diode; PiN diode; Schottky diode; Silicon Carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2007 European Conference on
Conference_Location
Aalborg
Print_ISBN
978-92-75815-10-8
Electronic_ISBN
978-92-75815-10-8
Type
conf
DOI
10.1109/EPE.2007.4417474
Filename
4417474
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