Title :
600V SOI Gate Driver IC with advanced level shifter concepts for medium and high power applications
Author :
Rossberg, Michael ; Vogler, B. ; Herzer, R.
Author_Institution :
SEMIKRON Elektron. GmbH & Co. KG, Nurnberg
Abstract :
An advanced level shifter topology allows any desired reference voltage drop between the primary side and the secondary sides of a high voltage IC (HVIC), including negative voltages caused by parasitic elements. This makes the HVICs suitable for medium and high power applications. For integration into latch-up free SOI technology the advanced level shifter topology is preferable. The capabilities of the level shifters are demonstrated in an experimental 7-channel 600V gate driver IC. It is demonstrated that the circuit remains operational for negative reference voltages down to -45V (bottom channel) and -20V (top channel) respectively.
Keywords :
driver circuits; power integrated circuits; reference circuits; silicon-on-insulator; SOI gate driver integrated circuit; high power applications; high voltage integrated circuit; level shifter topology; medium power applications; reference voltage drop; voltage 600 V; Application specific integrated circuits; Bridge circuits; Circuit topology; Driver circuits; Logic; Multichip modules; Silicon on insulator technology; Switches; Uniform resource locators; Voltage; High voltage IC’s; Power integrated circuit; SOI-device; Smart Power; System integration;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417484
