600V SOI Gate Driver IC with advanced level shifter concepts for medium and high power applications

Author

Rossberg, Michael ; Vogler, B. ; Herzer, R.

Author_Institution

SEMIKRON Elektron. GmbH & Co. KG, Nurnberg

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

8

Abstract

An advanced level shifter topology allows any desired reference voltage drop between the primary side and the secondary sides of a high voltage IC (HVIC), including negative voltages caused by parasitic elements. This makes the HVICs suitable for medium and high power applications. For integration into latch-up free SOI technology the advanced level shifter topology is preferable. The capabilities of the level shifters are demonstrated in an experimental 7-channel 600V gate driver IC. It is demonstrated that the circuit remains operational for negative reference voltages down to -45V (bottom channel) and -20V (top channel) respectively.

Keywords

driver circuits; power integrated circuits; reference circuits; silicon-on-insulator; SOI gate driver integrated circuit; high power applications; high voltage integrated circuit; level shifter topology; medium power applications; reference voltage drop; voltage 600 V; Application specific integrated circuits; Bridge circuits; Circuit topology; Driver circuits; Logic; Multichip modules; Silicon on insulator technology; Switches; Uniform resource locators; Voltage; High voltage IC’s; Power integrated circuit; SOI-device; Smart Power; System integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417484

Filename

4417484