Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation

Author

Benmansour, A. ; Azzopardi, S. ; Martin, JC ; Woirgard, E.

Author_Institution

IMS - ENSEIRB, Talence

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

10

Abstract

The investigation of the internal physical behaviour of the punch through trench insulated gate bipolar transistor, under clamped inductive switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.

Keywords

failure analysis; insulated gate bipolar transistors; mixed analogue-digital integrated circuits; thermal management (packaging); 2D mixed circuit; clamped inductive switching; device simulation; insulated gate bipolar transistor; nondestructive turn-off switchings; punch through trench IGBT; thermal runaway; turn-off failure mechanism analysis; Analytical models; Circuit simulation; Circuit testing; Computational modeling; Diodes; Failure analysis; Insulated gate bipolar transistors; Power semiconductor switches; Switching circuits; Temperature; Clamped inductive switching; IGBT; Power semiconductor device; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417488

Filename

4417488