Title :
Turn-off failure mechanism analysis of Punch Through Trench IGBT under clamped inductive switching operation
Author :
Benmansour, A. ; Azzopardi, S. ; Martin, JC ; Woirgard, E.
Author_Institution :
IMS - ENSEIRB, Talence
Abstract :
The investigation of the internal physical behaviour of the punch through trench insulated gate bipolar transistor, under clamped inductive switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.
Keywords :
failure analysis; insulated gate bipolar transistors; mixed analogue-digital integrated circuits; thermal management (packaging); 2D mixed circuit; clamped inductive switching; device simulation; insulated gate bipolar transistor; nondestructive turn-off switchings; punch through trench IGBT; thermal runaway; turn-off failure mechanism analysis; Analytical models; Circuit simulation; Circuit testing; Computational modeling; Diodes; Failure analysis; Insulated gate bipolar transistors; Power semiconductor switches; Switching circuits; Temperature; Clamped inductive switching; IGBT; Power semiconductor device; Simulation;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417488
