Tunable impedance matching networks for agile RF power amplifiers

Author

Maune, Holger ; Sazegar, Mohsen ; Jakoby, Rolf

Author_Institution

Microwave Eng., Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

The efficiency is one of the most critical parameters in the design of RF power amplifiers. For classical power amplifier (PA) the efficiency drops dramatically in the back-off region. One possibility of enhancing the properties of the PA is the implementation of a load modulation as used in the Doherty topology. The idea of using an adaptive impedance matching network at the output of the transistor is presented and analyzed in this paper. The topology of the matching network enables the connection of the matching circuit directly to the transistor. The matching network has been designed using the minimum mean square error method and realized on a BST thick film substrate. The measured input impedance is in the range of several ohms for a load of 50Ohm as required for power amplifiers.

Keywords

barium compounds; impedance matching; least mean squares methods; power amplifiers; radiofrequency amplifiers; strontium compounds; thick films; BST thick film substrate; BaSrTiO₃; Doherty topology; adaptive impedance matching network; agile RF power amplifiers; load modulation; matching circuit; minimum mean square error method; resistance 50 ohm; transistor output; tunable impedance matching networks; Impedance matching; Inductors; Linearity; Topology; Transistors; Tuning; Varactors; BST; Ferroelectrics; Power Amplifier; Tunable Components;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972681

Filename

5972681