Title :
Transient-enhanced Diffusion Of Iridium And Its Eflects On Electrical Characteristics Of Deep Sub-micron nMOSFETs
Author :
Cao, M. ; Griffin, P. ; Vande Voorde, P. ; Diaz, C. ; Greene, W.
Author_Institution :
ULSI Research Laboratory, Hewlett-Packard Labs, 3500 Deer Creek Road, Palo Alto, CA 94304
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623707