Transient-enhanced Diffusion Of Iridium And Its Eflects On Electrical Characteristics Of Deep Sub-micron nMOSFETs

Author

Cao, M. ; Griffin, P. ; Vande Voorde, P. ; Diaz, C. ; Greene, W.

Author_Institution

ULSI Research Laboratory, Hewlett-Packard Labs, 3500 Deer Creek Road, Palo Alto, CA 94304

fYear

1997

fDate

10-12 June 1997

Firstpage

Lastpage

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623707

Filename

623707

Link To Document