DocumentCode :
2583365
Title :
Transient-enhanced Diffusion Of Iridium And Its Eflects On Electrical Characteristics Of Deep Sub-micron nMOSFETs
Author :
Cao, M. ; Griffin, P. ; Vande Voorde, P. ; Diaz, C. ; Greene, W.
Author_Institution :
ULSI Research Laboratory, Hewlett-Packard Labs, 3500 Deer Creek Road, Palo Alto, CA 94304
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
85
Lastpage :
86
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623707
Filename :
623707
Link To Document :
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