Title :
Stacked structures In0.5Ga0.5As/GaAs quantum dots: Growth and characterization
Author :
Othaman, Zulkafli ; Aryanto, Didik ; Ismail, Abd Khamim ; Yahya, Mohamed Razman ; Soetedjo, Hariyadi
Author_Institution :
Ibnu Sina Inst. for Fundamental Sci. Studies, Univ. Teknol. Malaysia, Johor Bahru, Malaysia
Abstract :
Stacked structures of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) have been grown using Metal-Organic Chemical Vapor Deposition (MOCVD) with different number of stacks. High Resolution X-Ray Diffraction (HR-XRD) and Transmission Electron Microscope (TEM) characterization revealed that the formation of stacked self-assembled In0.5Ga0.5As QDs on GaAs (100) substrates were misaligned vertically and no visible defect has been detected from the cross-sectional TEM characterization. In addition, photoluminescence (PL) peak position is blue-shifted and PL intensity dramatically increased with increasing number of stacks. The peak and intensity of the PL measurement strongly depend on the structural of stacked self-assembled QDs and also the number of QDs layers.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; transmission electron microscopy; In0.5Ga0.5As-GaAs; cross-sectional TEM characterization; high resolution X-ray diffraction; metal-organic chemical vapor deposition; photoluminescence peak position; self-assembled quantum dots; stacked structures; transmission electron microscope; Capacitive sensors; Chemical vapor deposition; Electrons; Gallium arsenide; MOCVD; Quantum dot lasers; Quantum dots; Substrates; Temperature; X-ray diffraction; HR-XRD; Quantum dot; TEM; stacked structure;
Conference_Titel :
Electronic Computer Technology (ICECT), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7404-2
Electronic_ISBN :
978-1-4244-7406-6
DOI :
10.1109/ICECTECH.2010.5479936
