• DocumentCode
    2583447
  • Title

    200KV pulse power supply implementation

  • Author

    Kim, Jong-Hyun ; Ryu, Myung-Hyo ; Min, Byung-Duk ; Rim, Geun-Hie

  • Author_Institution
    Korea Electrotechnol. Res. Inst., Changwon
  • fYear
    2007
  • fDate
    2-5 Sept. 2007
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    200 kV pulse power supply implementation based on IGBT stacks is implemented in this study. The pulse power supply uses Marx circuit as high voltage pulse generator. The Marx circuit is composed of 20 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. It can generate the pulse voltage with the following parameters: Voltage: up to 200 kV, Rising time: sub muS, Pulse width: up to 4muS, PRR: 1000 pps Inductive and diode charging method is used to charge high voltage capacitor of each stage without power loss. The proposed pulsed power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental and simulated results are included to verify the system performances in this paper.
  • Keywords
    insulated gate bipolar transistors; power bipolar transistors; power inductors; pulse generators; pulsed power supplies; IGBT stacks; Marx circuit; diode charging; diode stacks; high voltage pulse generator; inductive charging; power inductors; pulse power supply; voltage 200 kV; Capacitors; Inductors; Insulated gate bipolar transistors; Power semiconductor switches; Pulse circuits; Pulse generation; Pulsed power supplies; Semiconductor diodes; Space vector pulse width modulation; Voltage; IGBT; Marx circuit; Pulse power; Stack;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2007 European Conference on
  • Conference_Location
    Aalborg
  • Print_ISBN
    978-92-75815-10-8
  • Electronic_ISBN
    978-92-75815-10-8
  • Type

    conf

  • DOI
    10.1109/EPE.2007.4417519
  • Filename
    4417519