DocumentCode :
2583447
Title :
200KV pulse power supply implementation
Author :
Kim, Jong-Hyun ; Ryu, Myung-Hyo ; Min, Byung-Duk ; Rim, Geun-Hie
Author_Institution :
Korea Electrotechnol. Res. Inst., Changwon
fYear :
2007
fDate :
2-5 Sept. 2007
Firstpage :
1
Lastpage :
5
Abstract :
200 kV pulse power supply implementation based on IGBT stacks is implemented in this study. The pulse power supply uses Marx circuit as high voltage pulse generator. The Marx circuit is composed of 20 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. It can generate the pulse voltage with the following parameters: Voltage: up to 200 kV, Rising time: sub muS, Pulse width: up to 4muS, PRR: 1000 pps Inductive and diode charging method is used to charge high voltage capacitor of each stage without power loss. The proposed pulsed power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental and simulated results are included to verify the system performances in this paper.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power inductors; pulse generators; pulsed power supplies; IGBT stacks; Marx circuit; diode charging; diode stacks; high voltage pulse generator; inductive charging; power inductors; pulse power supply; voltage 200 kV; Capacitors; Inductors; Insulated gate bipolar transistors; Power semiconductor switches; Pulse circuits; Pulse generation; Pulsed power supplies; Semiconductor diodes; Space vector pulse width modulation; Voltage; IGBT; Marx circuit; Pulse power; Stack;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
Type :
conf
DOI :
10.1109/EPE.2007.4417519
Filename :
4417519
Link To Document :
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