DocumentCode
2583583
Title
Analysis of isolated three-level half-bridge bidirectional DC/DC converter based on series resonant
Author
Jing, Penghui ; Wang, Cong
Author_Institution
Sch. of Mech. Electron. Inf. Eng., China Univ. of Min. & Technol. (Beijing), Beijing, China
fYear
2012
fDate
28-31 May 2012
Firstpage
194
Lastpage
199
Abstract
A novel topology of isolated three-level half-bridge bidirectional DC/DC converter is described in this paper, which can be used in the next generation medium-voltage power conversion systems. The proposed novel isolated bidirectional DC/DC converter has not only the advantages, such as enabling bidirectional power flow, ease of realizing soft-switching control, galvanic isolation, high reliability and having complete symmetry of configuration and so on, but also can be used in high voltage application and apparently decreased the stress of the switches. In this paper, working principle of the proposed DC/DC converter is discussed in detail. Equivalent circuit analysis is also used to obtain the criterion of soft switching conduction. In the end, simulation is done to certify the feasibility of the proposed DC/DC converter and accuracy of the criterion. Simulation results go hand in hand with our conclusion which indicates the correctness of our analysis.
Keywords
DC-DC power convertors; bridge circuits; circuit reliability; equivalent circuits; network topology; zero current switching; zero voltage switching; equivalent circuit analysis; galvanic isolation; high voltage application; isolated three-level half-bridge bidirectional DC-DC converter; next generation medium-voltage power conversion systems; series resonant; soft switching conduction; soft-switching control; Bridge circuits; DC-DC power converters; Equivalent circuits; Load flow; Switches; Topology; Zero voltage switching; bidirectional DC/DC converter; isolated three-level half-bridge; soft-switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics (ISIE), 2012 IEEE International Symposium on
Conference_Location
Hangzhou
ISSN
2163-5137
Print_ISBN
978-1-4673-0159-6
Electronic_ISBN
2163-5137
Type
conf
DOI
10.1109/ISIE.2012.6237083
Filename
6237083
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