• DocumentCode
    2583583
  • Title

    Analysis of isolated three-level half-bridge bidirectional DC/DC converter based on series resonant

  • Author

    Jing, Penghui ; Wang, Cong

  • Author_Institution
    Sch. of Mech. Electron. Inf. Eng., China Univ. of Min. & Technol. (Beijing), Beijing, China
  • fYear
    2012
  • fDate
    28-31 May 2012
  • Firstpage
    194
  • Lastpage
    199
  • Abstract
    A novel topology of isolated three-level half-bridge bidirectional DC/DC converter is described in this paper, which can be used in the next generation medium-voltage power conversion systems. The proposed novel isolated bidirectional DC/DC converter has not only the advantages, such as enabling bidirectional power flow, ease of realizing soft-switching control, galvanic isolation, high reliability and having complete symmetry of configuration and so on, but also can be used in high voltage application and apparently decreased the stress of the switches. In this paper, working principle of the proposed DC/DC converter is discussed in detail. Equivalent circuit analysis is also used to obtain the criterion of soft switching conduction. In the end, simulation is done to certify the feasibility of the proposed DC/DC converter and accuracy of the criterion. Simulation results go hand in hand with our conclusion which indicates the correctness of our analysis.
  • Keywords
    DC-DC power convertors; bridge circuits; circuit reliability; equivalent circuits; network topology; zero current switching; zero voltage switching; equivalent circuit analysis; galvanic isolation; high voltage application; isolated three-level half-bridge bidirectional DC-DC converter; next generation medium-voltage power conversion systems; series resonant; soft switching conduction; soft-switching control; Bridge circuits; DC-DC power converters; Equivalent circuits; Load flow; Switches; Topology; Zero voltage switching; bidirectional DC/DC converter; isolated three-level half-bridge; soft-switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics (ISIE), 2012 IEEE International Symposium on
  • Conference_Location
    Hangzhou
  • ISSN
    2163-5137
  • Print_ISBN
    978-1-4673-0159-6
  • Electronic_ISBN
    2163-5137
  • Type

    conf

  • DOI
    10.1109/ISIE.2012.6237083
  • Filename
    6237083