Characterization and modeling of silicon carbide power devices and paralleling operation

This paper presents recent research on several silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic characteristics, which show the advantages over their Si counterparts. The temperature dependency of these characteristics has also been presented in this paper. Then, simulation work of paralleling operation of SiC power MOSFETs based on a verified device model in Pspice is presented to show the impact of parasitics in the circuit on the switching performance.