Boron Implanted Shallow Junction Formation By High-temperature/ Short-time/high-ramping-rate(400/spl deg/C/sec) RTA

Author

Shishiguchi, S. ; Mineji, A. ; Hayashi, T. ; Saito, S.

Author_Institution

ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-11, Japan

fYear

1997

fDate

10-12 June 1997

Firstpage

Lastpage

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623709

Filename

623709

Link To Document