DocumentCode :
2583826
Title :
Design and test of a high power IGBT non-destructive tester
Author :
Ahmed, Arif ; Castellazzi, Alberto ; Coulbeck, Lee ; Johnson, Mikala C.
Author_Institution :
Soongsil Univ., Seoul, South Korea
fYear :
2012
fDate :
28-31 May 2012
Firstpage :
292
Lastpage :
297
Abstract :
The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented. In the last part, the design was verified by experimental test.
Keywords :
nondestructive testing; oscillations; power semiconductor switches; resistors; transient analysis; IGBT gate resistors; IGBT switches; Spice simulation software; current 2.4 kA; current ratings; destructive oscillations; high power IGBT nondestructive tester; primary design; stray elements; transient analysis; voltage 3.3 kV; voltage ratings; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Resistance; Switches; Transient analysis; Analysis; IGBT; non-destructive; tester;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics (ISIE), 2012 IEEE International Symposium on
Conference_Location :
Hangzhou
ISSN :
2163-5137
Print_ISBN :
978-1-4673-0159-6
Electronic_ISBN :
2163-5137
Type :
conf
DOI :
10.1109/ISIE.2012.6237100
Filename :
6237100
Link To Document :
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