• DocumentCode
    2583826
  • Title

    Design and test of a high power IGBT non-destructive tester

  • Author

    Ahmed, Arif ; Castellazzi, Alberto ; Coulbeck, Lee ; Johnson, Mikala C.

  • Author_Institution
    Soongsil Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    28-31 May 2012
  • Firstpage
    292
  • Lastpage
    297
  • Abstract
    The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented. In the last part, the design was verified by experimental test.
  • Keywords
    nondestructive testing; oscillations; power semiconductor switches; resistors; transient analysis; IGBT gate resistors; IGBT switches; Spice simulation software; current 2.4 kA; current ratings; destructive oscillations; high power IGBT nondestructive tester; primary design; stray elements; transient analysis; voltage 3.3 kV; voltage ratings; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Resistance; Switches; Transient analysis; Analysis; IGBT; non-destructive; tester;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics (ISIE), 2012 IEEE International Symposium on
  • Conference_Location
    Hangzhou
  • ISSN
    2163-5137
  • Print_ISBN
    978-1-4673-0159-6
  • Electronic_ISBN
    2163-5137
  • Type

    conf

  • DOI
    10.1109/ISIE.2012.6237100
  • Filename
    6237100