DocumentCode
2583826
Title
Design and test of a high power IGBT non-destructive tester
Author
Ahmed, Arif ; Castellazzi, Alberto ; Coulbeck, Lee ; Johnson, Mikala C.
Author_Institution
Soongsil Univ., Seoul, South Korea
fYear
2012
fDate
28-31 May 2012
Firstpage
292
Lastpage
297
Abstract
The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented. In the last part, the design was verified by experimental test.
Keywords
nondestructive testing; oscillations; power semiconductor switches; resistors; transient analysis; IGBT gate resistors; IGBT switches; Spice simulation software; current 2.4 kA; current ratings; destructive oscillations; high power IGBT nondestructive tester; primary design; stray elements; transient analysis; voltage 3.3 kV; voltage ratings; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Resistance; Switches; Transient analysis; Analysis; IGBT; non-destructive; tester;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics (ISIE), 2012 IEEE International Symposium on
Conference_Location
Hangzhou
ISSN
2163-5137
Print_ISBN
978-1-4673-0159-6
Electronic_ISBN
2163-5137
Type
conf
DOI
10.1109/ISIE.2012.6237100
Filename
6237100
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