Comparison of Si- and SiC-powerdiodes in 100A-modules

Author

Bartsch, Wolfgang ; Gediga, Swen ; Koehler, Hubertus ; Sommer, Rainer ; Zaiser, Georg

Author_Institution

SiCED Electron. Dev. GmbH & Co. KG, Nuernberg

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

8

Abstract

This paper presents the comparison of transient behaviour of 6.5 kV Si- and SiC-power diodes in 100 A-modules. The switching behaviour at a current level of 100 A is shown at DC link voltages up to 3.5 kV and at a junction temperature up to 125degC using 25 A-6.5 kV-Si-IGBTs as switching devices. Different switching conditions in chopper circuits realize different rates of current decay up to 1000 A/mus. Furthermore the switching behavior in a series connection of two SiC diodes is shown at DC link voltages up to 10.2 kV in a 3-level npc inverter phase and at a junction temperature up to 90degC. Experimental results are discussed in terms of reverse recovery currents and snappiness.

Keywords

choppers (circuits); insulated gate bipolar transistors; power bipolar transistors; silicon compounds; wide band gap semiconductors; IGBT; SiC; bipolar device; chopper circuits; current 100 A; current 25 A; high power discrete device; insulated gate bipolar transistor; passive component; power diodes; power semiconductor device; reverse recovery currents; switching behaviour; switching conditions; switching devices; voltage 6.5 kV; Annealing; Power measurement; Power semiconductor devices; Radiative recombination; Semiconductor diodes; Silicon carbide; Temperature; Testing; Uniform resource locators; Voltage; Bipolar device; High power discrete device; Measurement; Passive component; Power semiconductor device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417549

Filename

4417549