Designing and characterization of 60nm p-well MOSFET using Sentaurus TCAD Software

Author

Morsin, Marlia Binti ; Amriey, Mohd Khairul

Author_Institution

Fac. of Electr. & Electron. Eng., Univ. Tun Hussein Onn Malaysia, Parit Raja, Malaysia

fYear

2010

fDate

7-10 May 2010

Firstpage

169

Lastpage

172

Abstract

A 60nm p-well MOSFET device was designed and characterized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two major simulations done using Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulator for semiconductor manufacturing process. While Sentaurus Device work as a device simulator to obtain electrical characteristic. The simulations results are viewed in two dimensions (2D) using INSPECT and TECPLOT SV tools. The threshold voltages (V_th) for NMOS and PMOS of 60nm are 0.210889V and -0.182V, the drain saturation current (Id_sat) are 9.575e-04A and 1.439e-03A with the leakage current (Ioff) are 2.623e-05A and 2.601e-07A. The simulation results are almost identical with the theoretical.

Keywords

MOSFET; leakage currents; technology CAD (electronics); MOSFET device; NMOS; PMOS; Sentaurus TCAD software; TECPLOT SV tools; drain saturation current; leakage current; semiconductor manufacturing process; size 60 nm; threshold voltages; Aluminum; CMOS process; Design engineering; Fabrication; Ion implantation; Lithography; MOS devices; MOSFET circuits; Silicon; Testing; P-well MOSFET; Sentaurus Device (SD); Sentaurus Process (SP);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Computer Technology (ICECT), 2010 International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-7404-2

Electronic_ISBN

978-1-4244-7406-6

Type

conf

DOI

10.1109/ICECTECH.2010.5479966

Filename

5479966