Title :
A simple method to determine power-dissipation dependent thermal resistance for GaN HEMTs
Author :
Liu, Jun ; Sun, Lingling ; Yu, Zhiping ; Condon, Marissa
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80μm×0.3μm AlGaN/GaN HEMT, fabricated with an in-house AlGaN/GaN HEMTs technology.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; mathematical analysis; thermal resistance; AlGaN-GaN; in-house HEMT technology; junction temperature; mathematical treatment; nonlinear characteristics; power densities; power dissipation dependent thermal resistance; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature measurement; Thermal resistance; AlGaN/GaN HEMTs; extraction; junction temperature; thermal resistance;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972752
