Title :
Stable and metastable (Al,Ga)As/(In,Ga)As n-channel strained quantum well field-effect transistors
Author :
Zipperian, T.E. ; Jones, E.D. ; Dodson, B.W. ; Klem, J.F. ; Gourley, P.L.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
It is demonstrated that FETs with excellent electrical properties can be generated in metastable (Al,Ga)As/(In,Ga)As SQW (strained quantum well) material if processing approaches which do not substantially exceed the growth temperature are utilized. To demonstrate this effect an n-channel structure with a 15-nm In/sub 0.15/Ga/sub 0.85/As SQW, capped by 38 nm of Al/sub 0.1/Ga/sub 0.83/As and 40 nm of GaAs, was fabricated into FETs. It is further demonstrated that significant spatially nonuniform relaxation occurs after high-temperature annealing in structures which were not recognized until recently as being metastable. The dislocations associated with this relaxation modify transistor characteristics in gross, uncontrolled ways.<>
Keywords :
III-V semiconductors; aluminium compounds; annealing; field effect transistors; gallium arsenide; indium compounds; 15 nm; 38 nm; 40 nm; AlGaAs-InGaAs; FETs; SQW; growth temperature; high-temperature annealing; metastable; n-channel strained quantum well field-effect transistors; n-channel structure; spatially nonuniform relaxation; transistor characteristics; Capacitive sensors; FETs; Fabrication; Gallium arsenide; Ion implantation; Laboratories; Metastasis; Rapid thermal annealing; Rapid thermal processing; Thermal stability;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11069
