SiC-Powerdiodes: Design and performance

Author

Bartsch, Wolfgang ; Thomas, Bernd ; Mitlehner, Heinz ; Bloecher, Bernd ; Gediga, Swen

Author_Institution

SiCED Electron. Dev. GmbH & Co. KG, Erlangen

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

10

Abstract

In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4deg off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-diodes with a 3 mum thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125degC is shown. For these diodes first results on forward stability are also presented.

Keywords

power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; DC link voltages; SiC; SiC power diodes; SiC wafers; bipolar SiC-diodes; emitter recombination currents; forward stability; p-emitter thickness; size 3 mum; static measurements; voltage 4 kV; voltage 6.5 kV; Metallization; Power measurement; Power semiconductor devices; Radiative recombination; Semiconductor device measurement; Semiconductor diodes; Silicon carbide; Stress; Temperature; Voltage; Bipolar device; Measurement; Passive component; Power semiconductor device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417603

Filename

4417603