Title :
0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB Reliability
Author :
Ohguro, T. ; Nakamttra ; Morifuji, E. ; Yoshitomi, T. ; Morimoto, T. ; Harakawa, H. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Toshiba Corporation, 1, Komnkai Toshiba-cho, %iwai-ku, Kawasaki 210, Japan
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623715
